VisIC launches top-side-cooled isolated package

Estimated read time 2 min read

14 November 2023

VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride (GaN) transistors – has introduced the V22TG D3GAN gull-wing leaded top-side-cooled isolated package. Samples will be available in first-quarter 2024.

VisIC’s V22TG D3GAN top-side-cooled isolated package.

Picture: VisIC’s V22TG D3GAN top-side-cooled isolated package.

With a small footprint of 19.7mm x 13.6mm (including leads) and targeted at the automotive AEC-Q101 standard, the compact power package is said to provide automotive manufacturers with flexibility in system design and integration. It can also be used in the high-reliability fields of server power supplies, data centers, solar inverters, and a wide range of industrial applications.

Key features and benefits are cited as:

  • Leaded top-side-cooled isolated package: The V22TG D3GAN is encased in a leaded top-side-cooled isolated package, which enhances thermal management, ensuring optimal performance and reliability in demanding automotive environments. Moreover, the isolated package eases assembly due to not requiring additional isolation.
  • Automotive and high-voltage capability: The V22TG D3GAN is rigorously tested to meet automotive industry standards, making it suitable for a wide range of applications such as onboard chargers (OBCs), fuel cell, and hybrid electric vehicles. With a voltage capability of 650V, the SMD power package can handle high-voltage requirements with efficiency.
  • High power density and low on-resistance: Offering a low on-resistance of 22mΩ, the V22TG D3GAN delivers high power density, enabling automotive manufacturers to create more compact and lightweight systems without compromising performance. This power density ensures maximum efficiency and reduced energy losses.
  • Versatile and easy to implement: The V22TG D3GAN is designed to support various system configurations, including paralleling of devices, full-bridge, half-bridge topologies, and power factor correction (PFC) circuits. This flexibility allows for seamless integration into a wide array of power electronics applications.

“This advanced power package not only offers exceptional performance and reliability but also provides the versatility and ease of implementation required for emerging automotive and industrial applications,” says CEO & co-founder Dr Tamara Baksht.

Tags: GaN-on-Si power transistor



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