US-based Raytheon, a business of aerospace & defense company RTX, has been awarded a four-year, $15m contract from the US Defense Advanced Research Projects Agency (DARPA) to increase the electronic capability of radio frequency sensors with high-power-density gallium nitride (GaN) transistors. The improved transistors will have 16 times higher output power than traditional GaN with no increase in operating temperature… Source: https://www.semiconductor-today.com/news_items/2023/nov/raytheon-161123.shtml
