News: Microelectronics
3 November 2023
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA has announced another GaNFast win at Samsung, this time a new 25W charger for the flagship Galaxy S23 smartphone.
The Galaxy S23 features a Dynamic AMOLED 2X, 120Hz screen with 1750nits peak contrast, stretching it’s 1080 pixels x 2340 pixels across 90.1cm2 of Corning Gorilla Glass. It also has a Qualcomm Snapdragon 8 Gen 2 chip, up to 512GB/8GB RAM of storage and triple cameras up to 50MP.
For power, the S23 features a 3900mAh Li-ion battery and, with the GaNFast 25W charger (model EP-T2510) with USB PD 3.0 interface, reaches 50% charge in just 30 minutes and while, in sleep mode, consumes only 5mW of power. The PD 3.0 specification means that the new charger can power a range of devices from Galaxy Buds2 audio to Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Navitas’ GaNFast technology is used in a high-frequency, quasi-resonant (HFQR) topology running at 150kHz, shrinking the charger by more than 30%. The Navitas device is fully qualified to Samsung’s qualification requirements.
“As pioneers in mobile fast charging, Navitas continues to lead the next-gen market, with all 10 of the top 10 mobile OEMs in production with GaNFast products,” says David Carroll, senior VP worldwide sales. “From 25W to 20MW, our expanding range of leading-edge GaN and SiC products cover everything from mobile and consumer to electric vehicle (EV), solar and industrial applications.”
Navitas driving Spigen’s ArcStation Pro 45W GaN-based fast charger
Source: https://www.semiconductor-today.com/news_items/2023/nov/navitas-031123.shtml
