Semiconductor

Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance (ROHM)

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: “The intrinsic gate resistance ( Rg_in) , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). The study demonstrated that Rg_in is overestimated in

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Reducing Contact Resistance in Developing Transistors Based On 2D Materials

A new technical paper titled “WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study” was published by researchers at National Yang Ming Chiao Tung University. Abstract “Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type

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Modeling and Thermal Analysis of 3DIC

A new technical paper titled “Heat transfer in a multi-layered semiconductor device with spatially-varying thermal contact resistance between layers” was published by researchers at UT Arlington. “This work presents a theoretical model to determine the steady state temperature distribution in a general M-layer structure with spatial variation in thermal contact resistance between adjacent layers,” states the paper. Find the technical

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