Semiconductor

Integration Of Layered Semimetals With Conventional CMOS Platform

A technical paper titled “Layered semimetal electrodes for future heterogeneous electronics” was published by researchers at IIT Madras and Indian Institute of Science Education and Research. Abstract: “Integration of the emerging layered materials with the existing CMOS platform is a promising solution to enhance the performance and functionalities of the future CMOS based integrated circuits. In this direction, we have

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Semiconductor

Friction Between Single Layer Graphene And An Atomic Force Microscope Tip

A technical paper titled “Dynamically tuning friction at the graphene interface using the field effect” was published by researchers at University of Illinois Urbana-Champaign and University of California Irvine. Abstract: “Dynamically controlling friction in micro- and nanoscale devices is possible using applied electrical bias between contacting surfaces, but this can also induce unwanted reactions which can affect device performance. External

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Semiconductor

Directed Self-Assembly Finds Its Footing

Ten years ago, when the industry was struggling to deliver EUV lithography, directed self-assembly (DSA) roared to the forefront of research and development for virtually every manufacturer determined to extend the limits of 193i. It was the hot topic at of the 2012 SPIE Advanced Lithography Conference, with one attendee from Applied Materials comparing its potential to disrupt the industry

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Semiconductor

Overview Of The State Of Semiconducting Transition Metal Dichalcogenides (TMDC) Research

A technical paper titled “Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications” was published by researchers at Advanced Microelectronic Center Aachen (AMICA), RWTH Aachen University, and Bergische Universität Wuppertal. Abstract: “Semiconducting transition metal dichalcogenides (TMDC) are 2D materials, combining good charge carrier mobility, ultimate dimension down-scalability, and low-temperature integration. These properties make TMDCs interesting for flexible electronics, where

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Semiconductor

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)

A new technical paper titled “Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes” was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: “The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others,

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Semiconductor

Optimizing The Growth And Transfer Process of Graphene (Cambridge, RWTH Aachen)

A technical paper titled “Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene” was published by researchers at University of Cambridge, RWTH Aachen University, and National Institute for Materials Science. Abstract: “Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected

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Semiconductor

New Group Of Non-vdW 2D Materials Derived From Non-Layered Crystals Exhibiting Ultra Low Exfoliation Energies

A new technical paper titled “A New Group of 2D Non-van der Waals Materials with Ultra Low Exfoliation Energies” was published by TU Dresden, HZDR, and Aalto University. Abstract: “The exfoliation energy—quantifying the energy required to extract a two-dimensional (2D) sheet from the surface of a bulk material—is a key parameter determining the synthesizability of 2D compounds. Here, using ab

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Reducing Contact Resistance in Developing Transistors Based On 2D Materials

A new technical paper titled “WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study” was published by researchers at National Yang Ming Chiao Tung University. Abstract “Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type

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Semiconductor

Devices And Transistors For The Next 75 Years

The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, and what will be the next great memory architecture.[1] Industry veterans from the memory, logic, and research communities see high-NA EUV production, NAND flash with 1,000 layers,

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Semiconductor

2D Semiconductor Materials Creep Toward Manufacturing

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and atomically smooth interfaces, TMDs avoid scattering-induced

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