SB MOSFET-Based Ultra-Low Power Real-Time Neurons for Neuromorphic Computing (Indian Institute of Technology)

A technical paper titled “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing” was published by researchers at the Indian Institute of Technology (IIT) Bombay.

Abstract:

“Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-based ultra-low power voltage-controlled current source to enable real-time neurons for neuromorphic computing. Schottky-Barrier MOSFET is fabricated on a Silicon-on-insulator platform with polycrystalline Silicon as the channel and Nickel/Platinum as the source/drain. The Poly-Si and Nickel make the back-to-back Schottky junction enabling ultra-low ON current required for energy-efficient neurons.”

Find the technical paper here. Published: April 2023 (preprint)

Patil, Shubham, Jayatika Sakhuja, Ajay Kumar Singh, Anmol Biswas, Vivek Saraswat, Sandeep Kumar, Sandip Lashkare, and Udayan Ganguly. “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing.” arXiv preprint arXiv:2304.08504 (2023).

Related Reading
Power MOSFETs Knowledge Center

Source: https://semiengineering.com/sb-mosfet-based-ultra-low-power-real-time-neurons-for-neuromorphic-computing-indian-institute-of-technology/

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