14 February 2023

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA says that its GaNFast technology is being used to fast-charge the new OnePlus 11 5G flagship smartphone.

The 100W SUPERVOOC charger shipped with the OnePlus 11 5G is built around an NV6134 GaNFast IC, with integrated GaN power and drive, plus control, protection and sensing in a high-frequency, quasi-resonant (HFQR) topology. This enables up to three-times faster charging, and up to 40% energy savings, in only half the size and weight compared with legacy silicon solutions. As a result, the small 55mm x 55mm x 28mm (85cc) charger weighs only 112g, and achieves 1.18W/cc power density. Charging the phone’s 5000mAh battery from 1-50% takes only 10 minutes, and full 1-100% in about 25 minutes.

During the official OnePlus 11 5G launch event in New Delhi on 7 February (livestreamed around the world), Navitas was featured as a key partner, alongside Google, Snapdragon, Hasselblad and Dolby. Navitas has worked closely with OnePlus, releasing a series of GaNFast chargers into mass production, and co-operating in live events such as the promotion of the OnePlus 10T and 10R models at Nasdaq and the Consumer Electronics Show (CES 2023).

“Our strong collaboration with Navitas has allowed us to provide an advanced charger that not only delivers power quickly and efficiently to the high-capacity battery built into the OnePlus 11 5G but also keeps charger size and weight to an absolute minimum,” says Kinder Liu, OnePlus’ chief operating officer & head of R&D.

See related items:

Navitas’ 160W ultra-fast charger powers OnePlus 10T smartphone

Navitas powers OnePlus’ first in-box GaN smartphone charger

Tags: Power electronics GeneSiC

Visit: www.navitassemi.com

Source: https://www.semiconductor-today.com/news_items/2023/feb/navitas-140223.shtml