A new technical paper titled “Enhancing the precision of 3D sidewall measurements of photoresist using atomic force microscopy with a tip-tilting technique” by researchers at National Metrology Institute of Japan (NMIJ) and National Institute of Advanced Industrial Science and Technology (AIST).

“We have developed a technique for measuring the sidewall of the resist pattern using atomic force microscopy (AFM) that enables three-dimensional (3D), high-resolution, low-noise, and nondestructive measurements. Conventional LER measurement technology using scanning electron microscopy (SEM) causes shrinkage of the resist pattern due to electron-beam (EB) exposure, whereas our new AFM technique can in principle avoid EB-induced shrinkage,” states the paper.

Find the technical paper here. Published Feb. 2023.

Kizu, Ryosuke, et al. “Enhancing the precision of 3D sidewall measurements of photoresist using atomic force microscopy with a tip-tilting technique.” Journal of Applied Physics 133.6 (2023): 065302.

Source: https://semiengineering.com/measuring-3d-sidewall-topography-ler-for-photoresist-patterns-using-tip-tilting-afm-technology/