A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan.
“We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the cost as well as the energy consumption,” said Ding Wang, first author and research scientist in ECE, in this University of Michigan news release.
Find the technical paper here. Published March 2023.
Wang, D., Wang, P., He, M., Liu, J., Mondal, S., Hu, M., … & Mi, Z. (2023). Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT. Applied Physics Letters, 122(9), 090601. https://doi.org/10.1063/5.0143645.
Source: https://semiengineering.com/ferroelectric-hemt-reconfigurable-transistor-u-of-michigan/
