8 March 2023
Fabless firm ElectroPhotonic-IC Inc (ELPHiC) of Ottawa, Ontario, Canada, which provides indium phosphide (InP) optoelectronic chips, has announced sample availability of its high-speed electro-absorption modulator laser (EML) for data-centers applications for 800Gb/s and 1.6Tb/s modules. This follows the sampling of its 10G 1271 laser and its integrated PIN-TIA receiver for passive optical network (PON) applications that has showed very high reliability.
ELPHiC has developed an optoelectronic integration technology, leading to a new generation of InP chips enabling very high-speed modulators integrated with lasers and electronics. The new process also leads to higher performance, lower power consumption, and increased reliability for these EMLs.
“By integrating key optical and electronic elements on the same InP semiconductor substrate with the analog amplification circuitry, we create an architectural shift in building optics chipsets that significantly improve performance and power, lower cost, and reduce module form factor,” says CEO Jim Hjartarson. “Our patented PIN architecture also allows for sensitivity levels comparable to those of APDs [avalanche photodiodes],” he adds.
“This revolution for 800G products will be similar to what we saw for the 400G products four years ago: moving from an eight-laser product to a four-laser product per module, leading to the subsequent cost reduction,” says Christian Ilmi, VP worldwide sales. “Furthermore, it will enable the module manufacturers to fit eight lasers in a standard 1.6Tb/s module, which is not feasible today with the current laser technology,” he adds.
“Finally, the promise of monolithic integration of optical devices and electronics are coming to market,” believes Joe Costello, chairman of the board. “With the benefits of ELPHiC’s technology, the performance of optical links in PON, data centers and other emerging innovative markets will take a giant leap forward”.
ELPHiC sampling InP integrated optics/electronics PIN receiver, eliminating APDs